This document describes the features and characteristics of the CMOS SRAM K6T1008C2E family, including the use of SAMSUNG's advanced CMOS process technology, support for various operating temperature ranges and package types, and low data retention voltage and current support.
The K6T1008C2E family is a 128K×8‑bit low‑power CMOS static RAM fabricated with Samsung's advanced CMOS process. It supports a supply voltage of 4.5 V to 5.5 V, low data‑retention voltage of 2 V, and offers three package options (32‑DIP‑600, 32‑SOP‑525, 32‑TSOP‑F/R) for flexible system design.
The datasheet details electrical characteristics such as standby currents (500 pA for CMOS), power dissipation (1 W), operating temperature ranges (0 °C‑70 °C commercial, –40 °C‑85 °C industrial), timing parameters for 55 ns and 70 ns speed bins, and pin functions. Package dimensions and mechanical drawings are also provided.
| Organization | 128Kx8 |
|---|---|
| Power Supply Voltage | 4.5 V – 5.5 V |
| Low Data Retention Voltage | 2 V (Min) |
| Package Types | 32‑DIP‑600, 32‑SOP‑525, 32‑TSOP‑F/R |
| Operating Temperature (Commercial) | 0 °C – 70 °C |
| Operating Temperature (Industrial) | -40 °C – 85 °C |
| Power Dissipation | 1.0 W |
The device operates from 4.5 V to 5.5 V.
It is offered in 32‑DIP‑600, 32‑SOP‑525, and 32‑TSOP‑F/R packages.
The industrial version is rated from –40 °C to 85 °C.