M29F400T/M29F400B is a 4Mbit (512Kb x8 or 256Kb x16, Boot Block) Single Supply Flash Memory from Toshiba, its main features include 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READOPERATIONS, FAST ACCESS TIME: 55ns, FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical etc.
The M29F400T and M29F400B are 4‑Mbit (512 Kb × 8 or 256 Kb × 16) single‑supply flash memories with a boot block. They support in‑system programming and erasing using a 5 V supply, and provide fast access (55 ns) and programming times (≈10 µs per byte).
The devices are offered in TSOP‑48 (12 × 20 mm) and $044 plastic small‑outline packages. They feature 100 k program/erase cycles per block, 20‑year data retention, and operate over a wide temperature range (‑40 °C to 125 °C ambient, ‑65 °C to 150 °C storage). Detailed pin‑out diagrams, memory maps, and command interface specifications are included.
| Memory capacity | 4 Mbit (512 Kb × 8 or 256 Kb × 16) |
|---|---|
| Supply voltage (program/erase/read) | 5 V ± 10 % |
| Fast access time | 55 ns |
| Programming time (byte) | ≈10 µs per byte |
| Program/Erase endurance | 100 000 cycles per block |
| Data retention | 20 years |
| Input/Output voltage range | -0.6 V to 7 V |
| Ambient operating temperature | -40 °C to 125 °C |
| Storage temperature range | -65 °C to 150 °C |
The devices operate with a 5 V supply voltage toleranced at ±10 % for program, erase and read operations.
The flash memory provides a fast access time of 55 ns.
Each memory block can sustain up to 100 000 program/erase cycles.
The device guarantees a data retention period of 20 years.