M28F201 2 Mb (256K x 8, Chip Erase) FLASH MEMORY is a programmable memory that can be erased electrically at the chip level and programmed byte-by-byte. It has a fast access time of 70ns and is suitable for use in high speed microprocessor systems.
The M28F201 is a 2 Mb (256 K × 8) flash memory device offering electrical chip erase and byte‑programming capabilities. It operates with a 5 V ±10 % supply and a 12 V programming voltage, providing a fast 70 ns access time and low power consumption.
The datasheet includes pin configurations for PLCC‑32 and TSOP‑32 packages, absolute maximum ratings, command sequences, and electrical characteristics such as standby current (≈1 mA) and program/erase cycle endurance of 10 000 cycles.
| Memory size | 2 Mb (256 K × 8) |
|---|---|
| Supply voltage | 5 V ±10 % |
| Programming voltage | 12 V |
| Access time | 70 ns |
| Program/erase cycles | 10 000 cycles |
The device operates from –40 °C to 125 °C ambient temperature.
It is rated for 10 000 program/erase cycles.
Programming requires a Vpp of about 12 V (11.4 V – 12.6 V).
The standby current is approximately 1 mA typical.