Update: 30 September, 2023
M29F002BT, M29F002BNT 2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory provides a single 5V ± 10% supply voltage for program, erase, and read operations, with 45 ns access time, 8 µs byte programming time, and 7 memory blocks. The memory includes 1 boot block (top or bottom location), 2 parameter blocks, and 4 main blocks. The device features embedded byte program algorithm, embedded multi-block/chip erase algorithm, status register polling and toggle bits, erase suspend and resume modes, read and program another block during erase suspend mode, unlock bypass program command, faster production/batch programming, temporary block unprotection mode, low power consumption (standby and automatic standby), 100,000 program/erase cycles/block, and 20 years data retention (defectivity below 1 ppm/year). Electronic signature includes manufacturer code (20h), top device code M29F002BT (B0h), top device code M29F002BNT (B0h), bottom device code M29F002BB (34h), and bottom device code M29F002BNB (34h).
File format: PDF
Size: -
MD5 Checksum: 33A5580591F8E04413FAC3478A652919
Publication date: 07 May, 2012
Downloads: -
PDF Link: ST M29F002BT M29F002BNT M29F002BB M29F002BNB(1) handbook PDF