This document describes the features and characteristics of the CY7C130/CY7C131 and CY7C140/CY7C141 products produced by Cypress Semiconductor Corporation. These products are 1K x 8 dual-port static RAMs with true dual-ported memory cells that allow simultaneous reads of the same memory location. They are fabricated using 0.65-micron CMOS technology for optimum speed and power. The products offer high-speed access and low operating power. They support fully asynchronous operation, automatic power-down, and port-to-port communication. The CY7C130/CY7C131 can be used as a standalone 8-bit dual-port static RAM or as a master dual-port RAM in conjunction with the CY7C140/CY7C141 slave dual-port device to expand the data bus width. They are suitable for applications requiring shared or buffered data, such as cache memory for DSP, bit-slice, or multiprocessor designs.
The Cypress CY7C130 and CY7C131 are 1 K×8 dual‑port static RAM devices offering true dual‑ported memory cells for simultaneous reads. They are available in 48‑pin DIP, 52‑pin PLCC and PQFP packages and support both master and slave configurations.
The datasheet provides detailed electrical characteristics, timing diagrams, package dimensions and pin configurations, along with specifications such as access time, operating voltage range, temperature limits and output current capabilities.
| Access time | 15 ns |
|---|---|
| Operating power | 90 mA max |
| Maximum access time (ns) | 15‑55 ns |
| Supply voltage range | -0.5 V to +7.0 V |
The device provides a high‑speed access time of 15 ns.
It operates with a supply voltage from –0.5 V up to +7.0 V.