This document introduces Am29LV800B, an 8Mbit (1M x 8-bit/512K x 16-bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory - Die Revision 1. The product has single power supply operation, manufactured on 0.35µm process technology, high performance, low power consumption, flexible sector architecture, supports full chip erase, sector protection features, unlock bypass program command, top or bottom boot block configurations, embedded algorithms.
The Am29LV800B Known Good Die is an 8 Mbit, 3.0 V‑only CMOS flash memory die offered by AMD. This supplement details its distinctive characteristics, electrical and physical specifications, ordering options, and the quality‑assurance test flow used for known‑good die production.
Key sections include distinctive characteristics, general description, electrical specifications, product selector guide, die pad locations and descriptions, ordering information, physical specifications, product test flow, and terms and conditions of sale.
| Capacity | 8 Megabit (1 M × 8‑Bit/512 K × 16‑Bit) |
|---|---|
| Supply Voltage | 2.7 V to 3.6 V |
| Maximum Access Time | 90 ns or 120 ns |
| Automatic Sleep Mode Current | 200 nA |
| Standby Mode Current | 200 nA |
| Read Current | 7 mA |
| Program/Erase Current | 15 mA |
| Die Dimensions | 147 mils × 293 mils (3.74 mm × 7.45 mm) |
| Bond Pad Size | 3.94 mils × 3.94 mils (100 µm × 100 µm) |
| Sector Architecture (byte mode) | One 16 KB, two 8 KB, one 32 KB, fifteen 64 KB sectors |
The device operates from 2.7 V to 3.6 V for read, program, and erase operations.
The maximum access time is either 90 ns or 120 ns depending on the speed option.
In byte mode the die has one 16 KB sector, two 8 KB sectors, one 32 KB sector, and fifteen 64 KB sectors.
The die measures 147 mils by 293 mils (approximately 3.74 mm × 7.45 mm).