AMD Am28F010 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory

The Am28F010 is a 1 Megabit Flash memory orga- nized as 128 Kbytes of 8 bits each. AMD’s Flash mem- ories offer the most cost-effective and reliable read/ write non-volatile random access memory. The Am28F010 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM pro- grammers. The Am28F010 is erased when shipped from the factory. The standard Am28F010 offers access times as fast as 70 ns, allowing operation at clock speeds in excess of 100 MHz.


AMD Am28F010 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory - cover page
Brand
AMD
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
35
File format
PDF
File size
464 KB
Published
04 May, 2012
Updated
01 October, 2023
MD5 checksum
A554214B0D4DC1369D787C11A1EB8FC6

About this manual

The Am28F010 is a 1 Megabit (128 K × 8‑bit) CMOS flash memory offered by AMD. It is available in 32‑pin PDIP, PLCC and TSOP packages and can be programmed and erased in‑system using standard microprocessor interfaces. The device provides high‑speed access (up to 70 ns) with low power consumption and latch‑up protection.

The datasheet describes the distinctive characteristics, pin descriptions, command register operation, erase/program sequences, data‑protection features, physical dimensions and revision history. It also includes ordering information, valid product combinations and speed options.

What's inside

  • Distinctive Characteristics
  • General Description
  • Product Selector Guide
  • Ordering Information
  • Pin Description
  • Basic Principles
  • Overview of Erase/Program Operations
  • Data Protection
  • Physical Dimensions
  • Revision Summary

Specifications

Maximum access time70 ns
Maximum active current30 mA
Maximum standby current100 pA
Write/erase voltage12.0 V +5%
Write/erase cycles (minimum)10,000
Latch‑up protection current100 mA
Typical byte‑program time10 µs
Typical chip‑erase time1 s

Frequently asked questions

What is the typical programming time for a single byte?

The Am28F010 programs a byte in about 10 µs using the Flashrite™ algorithm.

How many write/erase cycles can the Am28F010 endure?

The device is rated for a minimum of 10,000 write/erase cycles.

What is the maximum access time of the Am28F010?

The fastest speed option provides a maximum access time of 70 ns.

What voltage is required for erase and program operations?

Erase and program operations use a 12.0 V ±5 % high‑voltage input on the Vpp pin.

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