This document describes the features and characteristics of a product under development at Advanced Micro Devices. The product is a 4 megabit (512 K x 8-bit) CMOS 3.0 volt flash memory chip, with single power supply operation, manufactured on 0.35 µm process technology, high performance, ultra low power consumption, and flexible sector architecture, etc.
The Am29LV104B is a 4 Megabit (512 K × 8‑Bit) CMOS flash memory device that operates from a single 2.7 V‑3.6 V supply. It offers full‑voltage operation (2.7‑3.6 V) and a regulated range (3.0‑3.6 V) with access times as fast as 55 ns. The device includes flexible sector architecture, low power modes, and built‑in erase/program algorithms.
Available in 32‑pin PLCC and 32‑pin TSOP packages, the part supports up to 1 000 000 write/erase cycles and operates across commercial, industrial, and extended temperature ranges. Pin functions, timing diagrams, and ordering information are detailed in the document.
| Memory size | 4 Megabit (512 K × 8‑Bit) |
|---|---|
| Supply voltage (full range) | 2.7 V to 3.6 V |
| Supply voltage (regulated range) | 3.0 V to 3.6 V |
| Fastest access time | 55 ns |
| Read mode current | 7 mA |
| Program/erase mode current | 15 mA |
| Standby mode current | 1 pA |
| Automatic sleep mode current | 1 µA (typical) |
| Sector architecture | 1 × 16 KB, 2 × 8 KB, 1 × 32 KB, 7 × 64 KB |
| Endurance | ≥ 1 000 000 write/erase cycles |
| Package types | 32‑pin PLCC, 32‑pin TSOP |
| Package types (cont.) | 32‑pin TSOP |
| Commercial temperature range | 0 °C to +70 °C |
| Industrial temperature range | -40 °C to +85 °C |
| Extended temperature range | -55 °C to +125 °C |
It works from 2.7 V to 3.6 V for full‑voltage operation and from 3.0 V to 3.6 V for regulated operation.
The device is guaranteed for a minimum of 1 000 000 write/erase cycles.
It is offered in 32‑pin PLCC and 32‑pin TSOP packages.
Access times of 55 ns, 70 ns, 90 ns, and 120 ns are supported.