This document contains information on a product under development at Advanced Micro Devices. The product is a 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory. It operates at 5.0 V ± 10% for read and write operations, minimizing system level power requirements. The product is compatible with JEDEC standards and pinout and software compatible with single-power-supply flash. It offers package options of 44-pin SO and 48-pin TSOP. The product guarantees a minimum of 100,000 write/erase cycles. It has a high performance with a maximum access time of 60 ns. It features a sector erase architecture, sector protection, embedded erase algorithms, embedded program algorithms, data polling and toggle bit feature, and Ready/Busy output (RY/BY) hardware method.
The Am29F400AT/Am29F400AB is a 4 Megabit CMOS flash memory organized as 512 Kbytes of 8‑bit or 256 Kwords of 16‑bit data. It is supplied by AMD and operates from a single 5.0 V power rail, offering low‑power standby modes and high‑speed access.
The device includes a flexible sector‑erase architecture (one 16 KB, two 8 KB, one 32 KB and seven 64 KB sectors), hardware sector protection, erase‑suspend/resume, and embedded programming/erase algorithms. It is available in 44‑pin SO and 48‑pin TSOP packages and meets JEDEC flash standards.
| Memory size | 4 Megabit (524,288 × 8‑bit / 262,144 × 16‑bit) |
|---|---|
| Supply voltage | 5.0 V (±10%) |
| Maximum access time | 60 ns |
| Write/erase cycles | ≥ 100,000 cycles |
| Standby current | 1 mA typical |
| Package options | 44‑pin SO, 48‑pin TSOP |
| Sector architecture | 1 × 16 KB, 2 × 8 KB, 1 × 32 KB, 7 × 64 KB |
| Operating temperature range | Commercial 0 °C to +70 °C, Industrial –40 °C to +85 °C |
It operates from a single 5.0 V supply (±10%).
The device guarantees a minimum of 100,000 write/erase cycles.
The memory is divided into one 16 KB sector, two 8 KB sectors, one 32 KB sector, and seven 64 KB sectors.
The maximum access time is 60 ns.