DHG 40 C 600 HB is a fast recovery diode produced by Philips Semiconductors. It has the characteristics of very low leakage current, very short recovery time, improved thermal behavior, very low Irm values, very soft recovery behavior, rated avalanche voltage for reliable operation, soft reverse recovery for low EMI/RFI, low Irm can reduce: - power dissipation within the diode - Turn-on loss in the commutating switch
The DHG 40 C 600 HB is an advanced fast recovery diode with planar passivated chips, very low leakage current, short recovery time, and soft reverse recovery for low EMI/RFI. It is suitable for antiparallel, snubber, free‑wheeling, and rectifier applications in SMPS and UPS designs.
The datasheet lists electrical ratings such as a 600 V repetitive reverse voltage, 70 A RMS current per pin, and a junction‑to‑case thermal resistance of 0.90 K/W. Mechanical information includes a TO‑247 common‑cathode package, a weight of 6 g, and detailed dimensions for the housing.
| Repetitive reverse voltage (VRRM) | 600 V |
|---|---|
| RMS current per pin | 70 A |
| Junction‑to‑case thermal resistance (RthJC) | 0.90 K/W |
| Package type | TO-247 |
| Weight | 6 g |
The diode is rated for a repetitive reverse voltage of 600 V.
It is supplied in a common‑cathode TO‑247 package.
The diode can handle up to 70 A RMS current per pin.
The junction‑to‑case thermal resistance is 0.90 K/W.