SDT08S60 thinQ!® SiC Schottky diode is the world's first 600V Schottky diode, using revolutionary semiconductor material - Silicon Carbide, with benchmark switching behavior, no reverse recovery, no temperature influence on the switching behavior, no forward recovery.
The Infineon SDTO8S60 is a silicon‑carbide Schottky diode rated for 600 V reverse voltage and 8 A continuous forward current. It features zero reverse recovery, low forward voltage drop, and high temperature stability, making it suitable for high‑efficiency power conversion.
The datasheet provides detailed maximum ratings, thermal resistance values, electrical parameters at various temperatures, and mechanical dimensions for the TO‑220‑2‑2 package. It also includes characteristic curves for forward voltage, reverse current, capacitance, and transient thermal impedance.
| Continuous forward current (If) | 8 A |
|---|---|
| Repetitive peak reverse voltage (VRRM) | 600 V |
| Power dissipation (Ptot) | 65 W |
| Operating temperature range | -55 °C to +175 °C |
| Junction‑to‑case thermal resistance (RθJC) | 2.3 K/W |
| Forward voltage at 8 A, 25 °C | 1.5 V (typ) |
| Reverse current at 600 V, 25 °C | 28 µA (typ) |
The diode can conduct up to 8 A continuously at 25 °C.
It is rated for a repetitive peak reverse voltage of 600 V.
The device can dissipate up to 65 W at a case temperature of 25 °C.
The diode operates from –55 °C up to +175 °C.