IPI60R520CP CoolMOSTM Power Transistor is a power transistor from Infineon. This product has the lowest power loss, ultra-low gate charge, extreme dv/dt rating, high peak current capability and high reliability, etc. It is suitable for hard switching SMPS topologies.
The IPIGOR520CP is a CoolMOS™ power transistor designed for hard‑switching SMPS topologies and high‑peak‑current applications. It features ultra‑low gate charge, high dv/dt rating, and is RoHS‑compliant.
The document lists key electrical ratings such as a continuous drain current of 6.8 A, pulsed drain current of 17 A, and a drain‑source breakdown voltage of 600 V. Thermal data include a junction‑to‑case resistance of 1.9 K/W and a maximum power dissipation of 66 W at 25 °C. Mechanical dimensions for the TO‑262 package are also provided.
| Continuous drain current (Id) | 6.8 A |
|---|---|
| Pulsed drain current (Ipp) | 17 A |
| Drain‑source breakdown voltage (Vds) | 600 V |
| Gate charge total (Qg) | 24 nC |
| Input capacitance (Ciss) | 630 pF |
| Output capacitance (Coss) | 32 pF |
| Rds(on) typical at 25 °C | 0.47 Ω |
| Junction‑to‑case thermal resistance (Rjc) | 1.9 K/W |
| Maximum power dissipation (Pmax) at 25 °C | 66 W |
The device can handle a continuous drain current of 6.8 A at 25 °C.
The total gate charge is specified as 24 nC.
The drain‑source breakdown voltage is rated at 600 V.
The typical Rds(on) at 25 °C is 0.47 Ω.