The SPW35N60C3 CoolMOSTM power transistor features new revolutionary high voltage technology, ultra-low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra-low effective capacitances, and improved transconductance.
This datasheet presents the specifications of the Infineon SPW35N60C3 CoolMOS power transistor, including its key features, package information, and maximum ratings. It covers electrical characteristics such as drain current, breakdown voltage, on‑state resistance, and gate charge, as well as thermal characteristics and typical performance curves.
Additional sections detail the reverse‑diode parameters, transient thermal impedance, safe operating area, and mechanical dimensions of the TO‑247 package. The document concludes with legal notices and contact information for Infineon Technologies.
| Input capacitance (Ciss) | 4500 pF |
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The input capacitance (Ciss) is 4500 pF.