This datasheet provides the parameter information of SPP21N50C3, SPI21N50C3, SPA21N50C3, including maximum voltage, current, power, temperature, etc.
The Infineon SPP21N50C3 family comprises three MOSFET variants (SPP21N50C3, SPI21N50C3, SPA21N50C3) built in TO‑220, TO‑262 and TO‑220FP packages. They feature a 560 V rating, ultra‑low gate charge and low on‑resistance, targeting high‑power switching applications.
Key electrical specifications include a continuous drain current of 21 A, a maximum pulsed current of 63 A, a total gate charge of 95 nC and a power dissipation of 34.5 W at 25 °C. The devices operate from –55 °C to +150 °C and meet RoHS and JEDEC standards.
| Power dissipation at 25 °C | 34.5 W |
|---|---|
| Operating temperature range | -55 °C to +150 °C |