This document describes the features and characteristics of the power transistors SPD18P06P and SPU18P06P, including P-Channel, enhancement mode, avalanche rated, dv/dt rated, and operating temperature.
The Infineon SPD18P06P and SPU18P06P SIPMOS power‑transistor datasheet provides detailed specifications for the P‑channel device, including maximum ratings, thermal characteristics, and electrical parameters. It lists key features such as a -60 V drain‑source voltage, -18.6 A continuous drain current, and 80 W power dissipation.
The document also includes dynamic characteristics like transconductance, capacitances, gate charge, and safe operating area curves. Additional information covers avalanche energy, reverse‑diode behavior, and recommended operating temperature ranges, along with legal and safety notices from Infineon Technologies.
| Drain‑source voltage (Vds) | -60 V |
|---|---|
| Continuous drain current (Id) | -18.6 A |
| Gate threshold voltage (Vgs(th)) | -2.1 V |
| On‑state resistance (Rds(on)) typical | 0.13 Ω |
| Power dissipation (Pmax) | 80 W |
| Avalanche energy (single pulse) | 150 mJ |
The device can handle a continuous drain current of -18.6 A at 25 °C.
The drain‑source breakdown voltage is specified as -60 V.
Typical on‑state resistance (Rds(on)) is 0.13 Ω.
The transistor can dissipate up to 80 W.