IPP60R125CP CoolMOSTM Power Transistor is a low RONxQg power transistor that offers ultra low gate charge, extreme dv/dt rating and high peak current capability. The device is qualified according to JEDEC1) standard for target applications, such as server and telecom.
The IPP60R125CP CoolMOS power transistor is a high‑performance device designed for hard‑switching topologies in server and telecom applications. It features ultra‑low gate charge, low on‑state resistance and high peak current capability, and complies with RoHS and JEDEC standards.
The datasheet provides detailed maximum ratings, thermal and electrical characteristics, dynamic behavior, gate‑charge information and mechanical dimensions, enabling designers to evaluate the device for their circuits.
| Continuous Drain Current (Id) at 25 °C | 25 A |
|---|---|
| Gate Charge (Qg) | 53 nC |
The maximum continuous drain current is 25 A at 25 °C.
The total gate charge is 53 nC from 0 V to 10 V.