SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 is a high voltage large power MOS transistor with ultra-low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability and improved transconductance.
This datasheet describes the SPP11N60C3 (also SPI11N60C3, SPA11N60C3) high‑voltage power transistor from Infineon. It includes maximum ratings, thermal characteristics, electrical parameters and safe operating area limits.
The document also contains package dimensions, transient thermal impedance data, and legal disclaimer information for use in design and compliance activities.
| Operating temperature range | -55 °C to +150 °C |
|---|---|
| Drain‑source voltage slope (dv/dt) | 50 V/µs |
The transistor operates from –55 °C up to +150 °C.