This document describes the features and characteristics of the IPI60R125CP CoolMOSTM power transistor, including the lowest figure-of-merit RONxQg, ultra low gate charge, extreme dv/dt rating, high peak current capability, etc. This product is designed for hard switching topologies in server and telecom applications.
The IPIGOR125CP CoolMOS power transistor is designed for high‑performance hard‑switching applications such as servers and telecom equipment. It offers ultra‑low on‑resistance, low gate charge, and high peak current capability while meeting RoHS and Pb‑free requirements.
The document provides detailed maximum ratings, thermal characteristics, electrical and dynamic parameters, gate‑charge data, and package dimensions for the PG‑TO262‑3‑1 outline. It also includes safety and legal disclaimer information from Infineon Technologies AG.
| Continuous drain current (Id) @ 25 °C | 25 A |
|---|---|
| Pulsed drain current (Id) @ 100 °C | 16 A |
| Power dissipation (Pd) @ 25 °C | 208 W |
| Gate threshold voltage (Vgs(th)) | 2 – 3.5 V |
| On‑state resistance (Rds(on)) | 0.11 – 0.125 mΩ |
| Avalanche energy (single pulse) | 708 mJ |
| Package type | PG‑TO262‑3‑1 |
| RoHS compliance | Yes |
The device can handle a continuous drain current of 25 A at 25 °C.
It uses the PG‑TO262‑3‑1 surface‑mount package.
Yes, the transistor is Pb‑free and RoHS compliant.
The gate threshold voltage is specified between 2 V and 3.5 V.