This document provides technical parameters for 2N7000N-3-11 transistor, including maximum current, maximum power dissipation, drain voltage, static gate source voltage, gate voltage, etc.
This datasheet describes the SPSO4N60C3 Cool MOS power transistor, a high‑voltage, high‑current device with a 850 V rating and low gate charge. It lists maximum ratings, thermal data, and detailed electrical characteristics for designers.
Key sections include maximum ratings, thermal resistance, on‑state resistance, gate‑charge curves, and switching loss calculations, as well as mechanical dimensions and packaging information.
| Continuous drain current (Id) at 25 °C | 45 A |
|---|---|
| Power dissipation at 25 °C | 50 W |
The device can conduct up to 45 A continuously at 25 °C.
It can dissipate up to 50 W at a case temperature of 25 °C.