IPW60R199CP CoolMOSTM Power Transistor is a power transistor produced by Infineon. It has the lowest RONxQg, ultra-low gate charge, extreme dv/dt rating, high peak current capability. It meets JEDEC standards and is suitable for server and telecom applications.
The IPW60R199CP CoolMOS Power Transistor is designed for hard‑switching topologies in server and telecom applications. It offers ultra‑low on‑resistance, low gate charge, and high peak current capability, while meeting JEDEC qualification and RoHS compliance.
The datasheet lists maximum ratings, thermal and electrical characteristics, dynamic behavior, and typical performance curves. Key parameters include continuous and pulsed drain currents, avalanche energy, breakdown voltage, on‑state resistance, gate threshold, capacitances, and power dissipation across temperature ranges.
| Continuous drain current (Id) @ 25 °C | 16 A |
|---|---|
| Pulsed drain current (Id,pulse) @ 25 °C | 51 A |
| Power dissipation (Pd) @ 25 °C | 139 W |
The device can continuously conduct 16 A at 25 °C.