The document provides information about the test conditions and maximum ratings of a product manufactured by IXYS in 2004, including voltage, current, power dissipation, and other parameters. The product features a silicon chip on a direct-copper-bond substrate, enabling high power dissipation and isolated mounting surface. Additionally, it offers high blocking capability, low on-resistance, and avalanche rating for unclamped inductive switching. With low thermal resistance and drain to tab capacitance, this product is suitable for applications such as switched mode power supplies, uninterruptible power supplies, power factor correction, welding, and inductive heating.
The IXYS IXKC 20N60C is a CoolMOS N‑Channel enhancement mode power MOSFET offered in an ISOPLUS220™ (TO‑220LV) package. It features an electrically isolated back surface, low on‑resistance, and high blocking capability, making it suitable for high‑power density designs.
Key specifications include a 600 V drain‑source rating, up to 20 A continuous drain current at 25 °C, and a 125 W power dissipation capability. The device is designed for applications such as switched‑mode power supplies, UPS, power‑factor correction, welding, and inductive heating, and benefits from easy assembly and space‑saving layout.
| Continuous Drain Current (ID) @ 25 °C | 20 A |
|---|---|
| Power Dissipation (PD) @ 25 °C | 125 W |
| Package | ISOPLUS220™ (TO‑220LV) |
| Weight | 3 g |
| Drain‑to‑Tab Capacitance | <30 pF |
The device is supplied in an ISOPLUS220™ (TO‑220LV) package.