The document describes the features and characteristics of IXYS products, including high power dissipation, isolated mounting surface, high blocking capability, and low on resistance. The product is suitable for applications such as switched mode power supplies and uninterruptible power supplies.
The ISOPLUS 220TM is a N‑channel enhancement mode power MOSFET built on a Direct‑Copper‑Bond substrate, offering high voltage isolation (800 V) and low on‑resistance. It features a silicon chip on an isolated back surface, low thermal resistance, and low drain‑to‑tab capacitance (<30 pF).
Typical applications include switched‑mode power supplies, uninterruptible power supplies, power‑factor correction circuits, welding equipment, and inductive heating. The device is rated for 13 A continuous drain current at 25 °C and supports avalanche operation for unclamped inductive switching.
| Drain‑Source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 13 A |
| On‑Resistance (RDS(on)) typical | 290 mΩ |
| Gate Charge (Qg) | 83 nC |
| Drain‑to‑Gate Charge (Qgd) | 42 nC |
| Turn‑On Delay (td(on)) | 25 ns |
| Thermal Resistance Junction‑to‑Case (RthJC) | 1.0 K/W |
| Reverse Diode Forward Current (IDSS) | 13 A |
The device is rated for a maximum drain‑source voltage of 800 V.
Typical on‑resistance is 290 mΩ when VGS is 10 V and the device is at the specified test condition.
It can handle a continuous drain current of 13 A at 25 °C.
The gate charge is specified as 83 nC.