This document is a datasheet for 75452-14 Rev. 2.5 P switch-type power module, which mainly introduces the package, pin definition, electrical characteristics, power characteristics, package size and other information of the module.
The SPBO3N60C3 is a 650 V Cool MOS™ power transistor featuring ultra‑low gate charge, high peak current capability and a periodic avalanche‑rated TO‑263 package. It is qualified according to JEDEC® for target applications and includes detailed electrical, thermal and mechanical data.
Key sections of the document include maximum ratings, thermal characteristics, electrical characteristics, gate‑charge data, transient thermal impedance, switching characteristics and package footprint dimensions, allowing designers to evaluate the device for high‑voltage, high‑current applications.
| Continuous drain current (Id) @ 25°C | 3.2 A |
|---|---|
| Pulsed drain current (Id,pulse) | 9.6 A |
| Avalanche energy (single pulse) | 100 mJ |
| Total gate charge (Qg) | 13‑17 nC |
| Package footprint (A dimension) | 4.300 mm × 4.572 mm |
The maximum continuous drain current is 3.2 A at 25 °C.
The footprint dimension A is 4.300 mm by 4.572 mm.