The BAS16 series is a silicon switching diode launched by ON Semiconductor. It features high switching speed and is suitable for high-frequency switching applications. The series adopts SOT23, TSLP-2-1, SC79, SCD80, SOD323, TSLP-4-4, SOT363, SC74, SOT323 and other packaging forms to meet the needs of different applications.
The BAS16 series are silicon switching diodes intended for high‑speed switching applications. The datasheet provides electrical ratings, thermal characteristics, and package information for the BAS16 and its variants (BAS16‑02L, BAS16‑03W, etc.).
Key sections include maximum ratings, thermal resistance, forward and reverse characteristics, AC parameters, and detailed package dimensions. The document also contains standard packing details and legal notices from Infineon Technologies AG.
| Diode reverse voltage (V_RRM) | 80 V |
|---|---|
| Peak reverse voltage (V_RSM) | 85 V |
| Forward current (I_F) for BAS16 | 250 mA |
| Total power dissipation (P_T) for BAS16 | 370 mW |
| Junction temperature (T_J) | 150 °C |
| Thermal resistance (θ_J‑A) for BAS16 | 260 K/W |
The BAS16 diode can withstand a reverse voltage of 80 V.
The typical forward current rating for BAS16 is 250 mA.
The datasheet specifies a maximum power dissipation of 370 mW for BAS16 under those conditions.
The thermal resistance (θ_J‑A) for BAS16 is 260 K/W.