BAR81 is a shunt RF switching diode produced by Rogers Corporation. It has the characteristics of high shunt signal isolation and low shunt insertion loss, and is widely used in high performance RF switches.
The BAR81W is a silicon RF switching diode designed for shunt‑configuration use in high‑performance RF switches. It offers high shunt signal isolation, low insertion loss, and is optimized for short‑open transformation using A/4 lines.
The datasheet provides maximum ratings, DC and AC characteristics, diode capacitance, and thermal resistance data, along with recommended usage notes such as the need for a perfect ground for optimum isolation.
| Reverse voltage (V_R) | 30 V |
|---|---|
| Forward current (I_F) | 100 mA |
| Total power dissipation (P_tot) | 100 mW |
| Junction temperature (T_j) | 150 °C |
| Operating temperature range | -55 °C to 125 °C |
| Storage temperature range | -55 °C to 150 °C |
| Reverse current (I_R) | 20 nA |
| Diode capacitance at 1 MHz, 1 V | 0.6 pF |
| Forward resistance at 100 MHz | 0.7 Ω |
The diode can withstand up to 30 V reverse voltage.
It is rated for a forward current of 100 mA.
The capacitance is 0.6 pF under those conditions.