This document describes the features of SPW35N60CFD CoolMOSTM power transistor, including high voltage technology, intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, etc.
The Infineon SPW35N60CFD datasheet describes the high‑voltage, low‑loss power transistor in a PG‑TO247 package. It lists key features such as fast‑recovery body diode, low gate charge, and compliance with JEDEC and RoHS standards.
The document includes sections on maximum ratings, thermal characteristics, static and dynamic electrical parameters, reverse‑diode behavior, capacitances, gate‑charge data, and mechanical dimensions, giving designers the data needed for circuit design and reliability analysis.
| Continuous drain current (Id) at 25 °C | 34.1 A |
|---|---|
| Pulsed drain current (Id) at 25 °C | 85 A |
| Input capacitance (Ciss) | 5060 pF |
| Output capacitance (Coss) | 1400 pF |
| Turn‑on delay time (t_on) | 20 ns |
| Total gate charge (Qg) | 163 nC |
The maximum continuous drain current is 34.1 A at 25 °C.
It is supplied in a PG‑TO247 package.
Yes, it is Pb‑free and RoHS compliant.