SPP80N08S2L-07 and SPB80N08S2L-07 are N-channel enhancement mode Logic Level MOSFETs with a rated voltage of 75V and a maximum RDS(on) of 6.8mΩ and a rated current of 80A.
The Infineon SPP80N08S2L-07 and SPB80N08S2L-07 are N‑channel enhancement‑mode, logic‑level power transistors rated for 80 A continuous drain current and 320 A pulsed current. They feature a 75 V drain‑source breakdown voltage, avalanche energy up to 810 mJ, and are designed for operation from –55 °C to +175 °C.
The datasheet provides detailed thermal characteristics, dynamic switching parameters, and safe‑operating‑area limits. It also includes warnings about use in life‑support devices and standard legal disclaimer information from Infineon Technologies AG.
| Continuous drain current (Id) | 80 A |
|---|---|
| Pulsed drain current (Id,pulse) | 320 A |
| Drain‑source breakdown voltage (Vds) | 75 V |
| Gate threshold voltage (Vgs(th)) | 1.2 V – 2 V |
| On‑state resistance (Rds(on)) | 5.3 mΩ (typ) |
| Power dissipation (Pd) | 300 W |
| Operating temperature range | -55 °C to +175 °C |
| Avalanche energy (Eas) | 810 mJ |
| Input capacitance (Ciss) | 5.130 nF (typ) |
| Reverse recovery time (trr) | 81 ns – 100 ns |
The datasheet specifies a continuous drain current of 80 A at 25 °C.
They are rated for operation from –55 °C up to +175 °C.
The single‑pulse avalanche energy is rated at 810 mJ.
Typical Rds(on) is about 5.3 mΩ at a gate voltage of 10 V and 67 A drain current.