SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor is a high voltage transistor with low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.
The Infineon SPP11N80C3 is a high‑voltage Cool MOS™ power transistor featuring an 800 V drain‑source rating, 11 A continuous drain current and ultra‑low gate charge. It is offered in a fully isolated PG‑TO220‑3‑31 (FullPAK) package suitable for demanding applications.
The document provides maximum ratings, thermal characteristics, detailed electrical parameters such as capacitances, on‑state resistance and gate charge, as well as mechanical dimensions and safety notices. It is intended for designers and engineers who need precise specifications for circuit design and reliability analysis.
| Drain‑Source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) | 11 A |
| Output Capacitance (Coss) | 800 pF |
| Power Dissipation (PD) at 25 °C | 156 W |
| Operating Temperature Range | -55 °C to +150 °C |
| Package Type | PG‑TO220‑3‑31 (FullPAK) |
The device is rated for a maximum drain‑source voltage of 800 V.
It can conduct up to 11 A continuously.
The transistor is supplied in a PG‑TO220‑3‑31 (FullPAK) fully isolated package.