The SPB20N60S5 Cool MOS™ power transistor has a maximum voltage of 600 volts, a 0.19-ohm on-resistance and a continuous drain current of 20 amperes. The transistor features ultra-low gate charge, extreme dv/dt ratings, ultra-low effective capacitances, and improved transconductance.
The SPB20N60S5 is a Cool MOS™ power transistor featuring ultra‑low gate charge, high voltage capability, and robust avalanche performance. It is supplied in a PG‑TO263 package and qualified according to JEDEC for target applications.
The document provides maximum ratings, thermal characteristics, electrical parameters, gate‑charge data, and typical output characteristics, along with mechanical footprint dimensions and safety notices.
| Continuous drain current (ID) at 25 °C | 20 A |
|---|---|
| Avalanche energy (single pulse) | 690 mJ |
| Power dissipation at 25 °C (PD) | 208 W |
The device can conduct up to 20 A continuously at an ambient temperature of 25 °C.
It is rated for a power dissipation of 208 W at a case temperature of 25 °C.