SPP/B80P06P SIPMOS® Small-Signal-Transistor is a P-channel enhancement mode diode with avalanche rating, dv/dt rating and 175°C operating temperature. It is compliant with RoHS standard.
The SPP/B80P06P is a P‑channel small‑signal MOSFET (SIPMOS) offered in a P‑TO263‑3‑2 package. It features a continuous drain current of -80 A at 25 °C, a gate‑threshold voltage around -2.4 V, and a drain‑source breakdown voltage of 60 V. The device is rated for operation up to +175 °C and includes avalanche energy capability of 824 mJ per pulse.
The datasheet also lists thermal resistance values, dynamic switching parameters, safe operating area limits, and compliance information such as Pb‑free lead finishing and RoHS compliance. These specifications support design of power‑management and switching applications where high current handling and robust avalanche performance are required.
| Package type | P‑TO263‑3‑2 |
|---|---|
| RoHS compliance | Pb‑free, RoHS compliant |
Yes, it has Pb‑free lead finishing and is RoHS compliant.