IPA50R299CP is a low on-resistance and low gate charge power transistor with extreme dv/dt rating and high peak current capability.
The IPA50R299CP is a CoolMOS power transistor offered in a TO‑220 full‑pak package. It features a low figure of merit (Rds(on)·Qg), ultra‑low gate charge, high peak current capability and compliance with RoHS. The device is qualified for hard and soft‑switching SMPS topologies, CCM PFC and PWM applications such as notebook adapters, PDPs and LCD TVs.
The datasheet provides maximum ratings, thermal and electrical characteristics, dynamic switching parameters, gate‑charge data, diode specifications and package dimensions. It also includes safety information, legal disclaimer and contact details for Infineon Technologies AG.
| Continuous drain current (Id) | 12 A |
|---|---|
| Drain‑source on‑state resistance (Rds(on)) | 0.27 Ω |
| Total gate charge (Qg) | 23 nC |
| Avalanche energy (single pulse) | 289 mJ |
| Input capacitance (Ciss) | 1190 pF |
| Output capacitance (Coss) | 53 pF |
| Maximum power dissipation (Pd) | 104 W |
| Operating temperature range | -55 °C to 150 °C |
| Package type | TO‑220 Full PAK |
The device can handle a continuous drain current of 12 A at 25 °C.
The total gate charge is 23 nC.
It is supplied in a TO‑220 full‑pak package.
The transistor is rated for operation from –55 °C to 150 °C.