Infineon IKW50N60T IGBT Datasheet

IKW50N60T is a IGBT product launched by Infineon. It uses TrenchStop® and Fieldstop technology and has the characteristics of low voltage drop, high reliability, high heat resistance, etc. This product is suitable for frequency converters and uninterrupted power supply applications.


Infineon IKW50N60T IGBT Datasheet - cover page
Brand
Infineon
Document type
Datasheet
Language
English
Pages
13
File format
PDF
File size
942 KB
Published
06 April, 2012
Updated
30 September, 2023
MD5 checksum
3310A0237DFCA64AD3F1785D30DD3BC3

About this manual

The IKW50N60T belongs to Infineon's TrenchStop® series of low‑loss IGBTs designed for frequency converters and UPS applications. The device features a very low on‑state voltage, high ruggedness, low EMI and a fast recovery anti‑parallel diode.

The datasheet lists maximum ratings, thermal resistances, static and dynamic electrical characteristics, switching times, gate charge and typical output curves, together with graphs of power dissipation and short‑circuit withstand time.

What's inside

  • Maximum Ratings
  • Thermal Resistance
  • Static Characteristic
  • Dynamic Characteristic
  • Switching Characteristic, Inductive Load
  • Anti‑Parallel Diode Characteristic
  • Typical Output Characteristic
  • Typical Switching Times
  • Typical Switching Energy Losses
  • Typical Gate Charge

Specifications

Collector‑emitter voltage (VCE)600 V
Power dissipation at 25 °C (P_D)333 W
Short‑circuit withstand time5 µs
Operating junction temperature range-40 °C to 175 °C
Maximum DC collector current (IC)80 A (25 °C)

Frequently asked questions

What is the maximum collector‑emitter voltage of the IKW50N60T?

The device is rated for a maximum collector‑emitter voltage of 600 V.

How much power can the IKW50N60T dissipate at 25 °C?

It can dissipate up to 333 W at a case temperature of 25 °C.

What is the short‑circuit withstand time for this IGBT?

The short‑circuit withstand time is specified as 5 µs.

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