This document introduces the technical parameters of the Thinfilm SiC Schottky Diode, including maximum ratings, operating temperature range, package type, and pin assignment.
The Infineon SiC Schottky diode series (SDPO06S60, SDB06S60, SDTO06S60) provides 600 V reverse voltage capability with no reverse recovery and low forward voltage drop, suitable for high‑efficiency power factor correction. The document lists product summary, package options, and key electrical parameters such as forward current, reverse voltage, and power dissipation.
Thermal characteristics, detailed dimensions, and mechanical data are included, along with graphs of forward and reverse characteristics. The datasheet also contains legal notices, warranty disclaimer, and contact information for Infineon Technologies AG.
| Maximum forward current (Ir) | 6 A |
|---|---|
| Repetitive peak reverse voltage (VRRM) | 600 V |
| Power dissipation (P_D) at 25 °C | 57.6 W |
| Operating temperature range | -55 °C to +175 °C |
| Forward voltage at 6 A, 25 °C | 1.5 V (typ.) |
| Reverse current at 600 V, 25 °C | 20 µA (typ.) |
| Thermal resistance, junction‑to‑case | 2.6 K/W |
| Package type (SDPO06S60) | P‑TO220‑3‑1 |
The maximum continuous forward current is 6 A.
They are rated for a repetitive peak reverse voltage of 600 V.
The diodes can operate from –55 °C up to +175 °C.