This is Infineon's datasheet for the BSO300N03S, an N-channel logic-level OptiMOS 2 power transistor in a PG-DSO-8 package. The document gives product summary features and maximum ratings, including drain-source voltage, continuous and pulsed drain current, avalanche energy, gate-source voltage, power dissipation, and operating temperature.
It also lists thermal characteristics, static and dynamic electrical characteristics, gate charge data, reverse diode parameters, and typical performance curves. The final pages provide the PG-DSO-8 package outline and footprint dimensions.
| Drain-source voltage (VDS) | 30 V |
|---|---|
| Continuous drain current (ID) | 72 A (10 s), 57 A (steady state) at TC = 25 °C |
| Drain-source on-state resistance (RDS(on)) | 25 mΩ typ, 30 mΩ max at VGS = 10 V, ID = 7.2 A |
| Package | PG-DSO-8 |
| Operating and storage temperature | -55 °C to 150 °C |
It is optimized for notebook DC/DC applications and is described as a fast switching MOSFET for SMPS.
30 mΩ maximum.
Yes; it has Pb-free lead plating and is RoHS compliant.
It uses a PG-DSO-8 package.