This datasheet mainly introduces the maximum ratings, characteristics, package, etc. of the SPB07N60C3 power transistor.
The SPBO7N60C3 is a high‑voltage, low‑gate‑charge MOSFET designed for demanding power applications. The datasheet provides maximum ratings, thermal characteristics, electrical parameters, and typical performance curves.
Key sections include maximum drain current, breakdown voltage, gate charge, power dissipation, transient thermal impedance, and recommended PCB footprint. Legal and safety notices conclude the document.
| Continuous Drain Current (Ic) | 7.3 A |
|---|---|
| Drain‑Source Breakdown Voltage (Vds) | 600 V |
| Power Dissipation (Pd) at 25°C | 83 W |
The device can handle a continuous drain current of 7.3 A at 25 °C.
The breakdown voltage is rated at 600 V.
It can dissipate up to 83 W when the case temperature is 25 °C.