IPD60R385CP CoolMOS® Power Transistor is the worldwide best R ds,on in TO252, ultra low gate charge, extreme dv/dt rated, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating, RoHS compliant.
The IPD60R385CP is a CoolMOS® power transistor offered in a TO‑252 package. It features a very low on‑resistance, ultra‑low gate charge, and high peak current capability, making it suitable for hard‑switching SMPS topologies.
The document lists maximum ratings, thermal and electrical characteristics, dynamic behavior, and package dimensions. It also includes safety and compliance notes, such as RoHS compliance and JEDEC qualification.
| Continuous drain current (Id) | 9.0 A |
|---|---|
| Pulsed drain current (Id,pulse) | 27 A |
| Power dissipation (Pd) | 83 W |
| Gate resistance (Rg) | 1.8 Ω |
The device can conduct a continuous drain current of 9.0 A at 25 °C.
The maximum power dissipation is 83 W at a case temperature of 25 °C.