INFINEON BFP193W handbook

The document describes the features and characteristics of the 2005-09-29 BFP193W 1 NPN Silicon RF Transistor, which is suitable for low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It has an fT of 8 GHz and a gain of 1 dB at 900 MHz.


Brand
Infineon
File format
PDF
Published
06 April, 2012
Updated
28 September, 2023
MD5 checksum
3EF906B2E7E7BE68ECF86F1379587342
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