The document describes the features and characteristics of the 2005-09-29 BFP193W 1 NPN Silicon RF Transistor, which is suitable for low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It has an fT of 8 GHz and a gain of 1 dB at 900 MHz.
This document describes the Infineon BFP193W NPN silicon RF transistor, intended for low‑noise, high‑gain amplifiers up to 2 GHz. It lists the maximum ratings, DC and AC electrical characteristics, and SPICE model parameters.
Package information, including the SOT‑343 outline, footprint dimensions, marking layout and standard reel packing, is also provided for designers integrating the device into printed‑circuit boards.
| Collector‑emitter voltage (VCEO) | 12 V |
|---|---|
| Collector current (Ic) | 80 mA |
| Total power dissipation (Ptot) | 580 mW |
| Package type | SOT‑343 |
The maximum collector‑emitter voltage (VCEO) is 12 V.
It can operate from –55 °C up to 150 °C.
The device is supplied in an SOT‑343 surface‑mount package.