The IPP90R1K2C3 CoolMOS™ power transistor features the lowest RONxQg, extreme dv/dt rating, high peak current capability, qualified according to JEDEC1) for target applications, lead-free lead plating; RoHS compliant; Ultra low gate charge CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies, PC Silverbox and consumer applications, Industrial SMPS
The IPP90R1K2C3 is a 900 V CoolMOS power transistor designed for quasi‑resonant flyback/forward topologies, PC Silverbox, consumer applications, and industrial SMPS. It offers a low figure‑of‑merit RON·QG, high dv/dt rating, and a compact PG‑TO220 package.
The datasheet lists maximum ratings, thermal resistance, dynamic switching characteristics, gate charge data, and typical output curves. It also includes package dimensions, mounting torque specifications, and legal disclaimer information for safe use.
| Maximum drain‑source voltage (VDS) | 900 V |
|---|---|
| Continuous drain current (ID) | 2.8 A |
| On‑state resistance (RDS(on)) max | 1.2 Ω |
| Junction‑to‑case thermal resistance (RthJC) | 1.5 K/W |
The device is rated for a maximum VDS of 900 V.
It is supplied in a PG‑TO220 package.
The continuous drain current is 2.8 A at 25 °C.