BUZ 30A is a N channel enhancement type avalanche rated power transistor
This handbook details the specifications of the Infineon BUZ30A N‑channel enhancement‑mode power MOSFET. It includes maximum ratings such as continuous and pulsed drain current, power dissipation, and thermal limits, as well as detailed static and dynamic electrical characteristics.
The document also presents characteristic curves for output, transfer, and capacitance behavior, along with avalanche energy data and safe operating area graphs, giving designers the information needed to integrate the device into power applications.
| Power dissipation at 25 °C | 125 W |
|---|---|
| Thermal resistance, chip case (RθJC) | <1 K/W |
The device can dissipate up to 125 W at 25 °C.