This document describes the features of the IPW60R299CP CoolMOSTM power transistor, including the lowest figure-of-merit R ONxQg, ultra-low gate charge, extreme dv/dt rating, and high peak current capability. The product is qualified according to JEDEC standards and is suitable for hard switching SMPS topologies.
The IPW60R299CP is a CoolMOS power transistor designed for hard‑switching SMPS topologies. It offers ultra‑low on‑resistance, low gate charge, high peak current capability, and is RoHS‑compliant. The datasheet lists its features, typical applications, and package information.
The document details electrical and thermal ratings, including continuous and pulsed drain currents, on‑state resistance, gate threshold voltage, avalanche energy, and thermal impedance. It also provides dynamic characteristics such as input/output capacitance, turn‑on/off times, and gate charge curves, as well as mechanical dimensions and outline drawings.
| Continuous drain current (Id) | 11 A |
|---|---|
| Pulsed drain current (Idp) | 34 A |
| Drain‑source on‑state resistance (Rds(on)) typical | 0.27 mΩ |
| Gate threshold voltage (Vgs(th)) typical | 2.5 V |
| Maximum junction temperature (Tj) | 150 °C |
| Package | TO‑247‑3‑1 |
The maximum continuous drain current is 11 A at 25 °C.
The typical on‑state resistance is 0.27 mΩ at 25 °C.
It is supplied in a TO‑247‑3‑1 (PG‑TO247‑3‑1) package.