IPI60R165CP CoolMOS power transistor features the lowest RONxQg ratio, ultra low gate charge, extreme dv/dt rating and high peak current capability. It is qualified according to JEDEC1) standard for target applications in server and telecom.
The IPIGOR165CP CoolMOS power transistor is a high‑performance MOSFET designed for hard‑switching applications in servers and telecom equipment. It offers low on‑resistance, low gate charge, and high dv/dt capability while meeting RoHS and JEDEC standards.
The document provides detailed electrical, thermal, and dynamic characteristics, package dimensions, and safety information. It includes maximum ratings, typical performance curves, and guidelines for soldering and handling.
| Continuous drain current (Id) at 25 °C | 21 A |
|---|---|
| Pulsed drain current (Id) at 25 °C | 61 A |
| On‑state resistance (Rds(on)) typ at 25 °C | 0.165 Ω |
| Gate charge total (Qg) | 39 nC |
| Input capacitance (Ciss) typ | 2000 pF |
| Output capacitance (Coss) typ | 100 pF |
| Gate threshold voltage (Vgs(th)) typ | 2.5 V |
| Avalanche energy (single pulse) | 522 mJ |
| Package | PG‑TO262‑3‑1 |
| RoHS compliance | Yes |
The device can handle a continuous drain current of 21 A at 25 °C.
The typical total gate charge is 39 nC.
Yes, it is Pb‑free and RoHS compliant.
It is supplied in a PG‑TO262‑3‑1 surface‑mount package.