This datasheet lists the technical specifications of the FF300R12KE3 IGBT-module
The FF300R12KE3 is a 62 mm C‑series IGBT module featuring trench/field‑stop IGBT cells and an EmCon high‑efficiency diode. It provides a collector‑emitter voltage rating of 1200 V and a continuous collector current of up to 440 A, with detailed electrical and thermal parameters for design engineers.
The document includes characteristic electrical values, thermal resistance data, package dimensions, switching loss curves, and usage conditions. It is intended for technically trained personnel who evaluate the suitability of the module for specific applications. This manual is written in German.
| Collector‑Emitter Voltage (Vces) | 1200 V |
|---|---|
| Continuous Collector Current (Ic) | 440 A |
| Peak Collector Current (pulse, 1 ms) | 600 A |
| Collector‑Emitter Saturation Voltage (Vcesat) at 125 °C | 2.00 V |
| Gate‑Emitter Threshold Voltage (Vge) | 5.0 V (typ.) |
| Input Capacitance (Cies) | 21.0 nF |
| Reverse Recovery Charge (Qrr) | 30.0 µC |
| Thermal Resistance Junction‑to‑Case (Rjc) | 0.085 K/W |
| Thermal Resistance Case‑to‑Heatsink (Rch) | 0.034 K/W |
| Package Mounting Depth (max) | 10 mm |
| Weight | 340 g |
The module is rated for a collector‑emitter voltage of 1200 V.
It can carry up to 440 A of continuous collector current.
The junction‑to‑case thermal resistance is 0.085 K/W.