BUZ 345 is an N-channel enhancement mode avalanche rated power transistor. It features a 100 V drain-source breakdown voltage, 41 A continuous drain current, and 0.045 Ω drain-source on-resistance. It is suitable for a variety of applications such as motor drives, power conversion, and lighting control.
The BUZ 345 is an N‑channel enhancement‑mode SIPMOS power transistor designed for high‑current applications. It offers a 100 V drain‑source breakdown voltage, 41 A continuous drain current, and avalanche‑rated capability.
The datasheet lists maximum ratings, static and dynamic electrical characteristics, reverse‑diode parameters, power‑dissipation limits, safe‑operating‑area curves, and typical output and transfer characteristics. Graphs illustrate transient thermal impedance, drain‑source on‑resistance, and gate‑charge behavior.
| Continuous drain current (Id) | 41 A |
|---|---|
| Power dissipation (Ptot) at 25 °C | 150 W |
| Gate‑source voltage (Vgs) | +20 V |
| Thermal resistance, junction‑to‑case (RθJC) | 0.83 K/W |
| Thermal resistance, junction‑to‑ambient (RθJA) | 0.75 K/W |
| Operating temperature range | -55 °C to +150 °C |
| Input capacitance (Ciss) typ. | 1800 pF |
The BUZ 345 can handle a continuous drain current of 41 A.
Ciss is typically 1800 pF.
It can dissipate up to 150 W at a case temperature of 25 °C.