This document describes the features and characteristics of the SPI80N08S2-07, SPP80N08S2-07, and SPB80N08S2-07 OptiMOS power transistors, released on May 9, 2003. These features include N-channel enhancement mode, 175°C operating temperature, avalanche rating, dv/dt rating, etc.
The SPI80N08S2-07 family comprises N‑channel enhancement‑mode optiMOS power transistors offered in three package variants (P‑T0262‑3‑1, P‑T0220‑3‑1, P‑T0263‑3‑2). The document provides detailed product summaries, maximum ratings, and characteristic curves for each version, including continuous and pulsed drain current capabilities, avalanche energy, and safe operating area.
Thermal data, dynamic switching parameters, and diode characteristics are also listed, together with warnings, delivery terms and contact information for Infineon Technologies AG. The datasheet is intended for designers needing precise component data for high‑power applications.
| Avalanche energy, single pulse (Eas) | 810 mJ |
|---|
The single‑pulse avalanche energy is rated at 810 mJ.