The IPP90R1K0C3 CoolMOS™ Power Transistor has the lowest figure-of-merit RON x Qg, extreme dv/dt ratings, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating, RoHS compliant, ultra low gate charge. CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies, PC Silverbox and consumer applications, Industrial SMPS.
The IPP90R1K0C3 CoolMOS power transistor is a 900 V, low‑loss device designed for quasi‑resonant flyback/forward topologies, PC power supplies, consumer and industrial SMPS applications. The datasheet outlines its key features such as ultra‑low gate charge, high peak current capability, and RoHS‑compliant Pb‑free construction.
Detailed electrical ratings include continuous and pulsed drain currents, breakdown voltage, on‑state resistance, capacitances, gate charge, avalanche energy, and safe operating area. Thermal characteristics, package dimensions (PG‑TO220), and mounting recommendations are also provided for designers.
| Continuous drain current (Id) | 5.7 A |
|---|---|
| Pulsed drain current (Id,pulse) | 12 A |
| On‑state resistance (Rds(on)) typ @ 25 °C | 0.78 mΩ |
| Gate charge total (Qg) | 34 nC |
| Output capacitance (Coss) | 42 pF |
The device can conduct a continuous drain current of 5.7 A at 25 °C.
The typical on‑state resistance is 0.78 mΩ at 25 °C.