IDT12S60C 2nd Generation thinQ!TM SiC Schottky Diode is a new type of Schottky diode produced by IDT. It has no reverse recovery/no forward recovery, high surge current capability, lead-free welding and other features. It is suitable for CCM PFC, motor drive and other fast switching applications.
The IDT12S60C is a silicon‑carbide (SiC) Schottky diode designed for fast‑switching applications such as CCM PFC and motor drives. It features no reverse recovery, high surge current capability, and is RoHS‑compliant.
The datasheet lists maximum ratings, thermal and electrical characteristics, and mechanical dimensions for the PG‑TO220‑2‑2 package, including continuous forward current of 12 A, reverse voltage of 600 V, and an operating temperature range of –55 °C to 175 °C.
| Continuous forward current (IF(av)) | 12 A |
|---|---|
| Surge non‑repetitive forward current (IFSM) | 98 A |
| Repetitive peak reverse voltage (VRRM) | 600 V |
| Forward voltage (VF) at 12 A, 25 °C | 1.5‑1.7 V |
| Power dissipation (PD) at 25 °C | 115 W |
| Junction‑to‑case thermal resistance (RθJC) | 1.3 K/W |
| Package type | PG‑TO220‑2‑2 |
The diode is rated for a repetitive peak reverse voltage of 600 V.
It can conduct a continuous forward current of 12 A at 25 °C.
The device is supplied in a PG‑TO220‑2‑2 (TO‑220) package.