IPB60R299CP CoolMOSTM power transistor features the lowest figure-of-merit RONxQg, ultra low gate charge, extreme dv/dt rated, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating, RoHS compliant. CoolMOS CP is designed for hard switching SMPS topologies.
The IPB60R299CP is a CoolMOS™ power transistor from Infineon, designed for hard‑switching SMPS topologies and qualified to JEDEC standards. It offers a low figure‑of‑merit Rds(on) and ultra‑low gate charge, making it suitable for high‑efficiency power conversion.
The document lists detailed electrical, thermal, and dynamic characteristics, including maximum ratings, typical on‑state resistance, gate charge curves, and avalanche energy. Dimensional outlines and package information for the TO‑263 package are also provided.
| Continuous drain current (Id) | 11 A |
|---|---|
| Pulsed drain current (Id,pulse) | 34 A |
| Total gate charge (Qg) | 22 nC |
The maximum continuous drain current is 11 A at 25 °C.
The total gate charge is specified as 22 nC.