SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS™ Power Transistors feature 560 V VDS@Tjmax, 0.6 Ω RDS(on) and 7.6 A ID. Its features include: New revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.
This datasheet provides the electrical, thermal and mechanical specifications for Infineon's SPPO8N50C3, SPIO8N50C3 and SPAO08N50C3 Cool MOS™ power transistors. It includes maximum ratings, characteristic curves, and package information for the PG‑TO‑220, PG‑TO‑262 and PG‑TO‑220FP variants.
Key sections cover maximum ratings (continuous drain current, breakdown voltage, avalanche energy), thermal characteristics (junction‑to‑case resistance, soldering temperature), electrical characteristics (gate charge, capacitances, on‑state resistance), and typical output and transfer curves. The document ends with reference dimensions and legal notices.
| Gate‑source voltage (Vgs) max | +20 V |
|---|---|
| Avalanche energy (single pulse) | 230 mJ |
| Power dissipation at 25 °C (P_D) | 83 W |
| Thermal resistance, junction‑to‑case (Rjc) | 1.5 K/W |
| Output capacitance (Coss) | 350 pF |
The device can tolerate a gate‑source voltage up to +20 V.
The single‑pulse avalanche energy is rated at 230 mJ.