SPN02N60C3 CoolMOSTM Power Transistor features new revolutionary high voltage technology, ultra low gate charge, ultra low effective capacitances and extreme dv/dt rating.
This datasheet provides the specifications for the Infineon SPNO2N60C3 power transistor, a high‑voltage MOSFET in a SOT‑223 package. It includes maximum ratings, thermal data, and detailed electrical parameters needed for design and verification.
Key sections cover product summary, maximum ratings, thermal and electrical characteristics, dynamic behavior, and package footprint information, allowing engineers to assess suitability for high‑voltage, low‑gate‑charge applications.
| Input capacitance (Ciss) | 200 pF |
|---|---|
| Gate‑to‑source charge (Qg) | 1.6 nC |
The input capacitance (Ciss) is specified as 200 pF.