IKP01N120H2 is a high-speed power semiconductor product with a soft, fast recovery anti-parallel EmCon HE diode. It is designed for applications such as switch-mode power supplies, lamp ballasts, and zero-voltage switching converters in soft-switching/resonant topologies. The product features second-generation HighSpeed-Technology for 1200V applications, offering loss reduction in resonant circuits, temperature stable behavior, parallel switching capability, tight parameter distribution, and optimized Eoff for IC=1A.
The IKPO1N120H2 is a high‑speed, 1200 V, 1 A IGBT with an anti‑parallel diode, designed for SMPS, lamp ballast and resonant‑converter topologies. The device offers low loss in resonant circuits, temperature‑stable behavior and tight parameter distribution.
Key electrical ratings include a 1200 V collector‑emitter voltage, 1 A continuous collector current and 28 W power dissipation at 25 °C. Thermal resistance values are 45 K/W (junction‑to‑case) for the IGBT and 11 K/W for the diode. Switching characteristics such as turn‑on delay (13 ns) and turn‑off delay (370 ns) are provided, along with typical switching energy losses up to 0.25 mJ depending on temperature and gate resistance.
| Collector‑emitter voltage (VCE) | 1200 V |
|---|---|
| Continuous collector current (IC) | 1 A |
| Power dissipation at 25 °C (PD) | 28 W |
| Turn‑on delay time (tON) | 13 ns |
| Turn‑off delay time (tOFF) | 370 ns |
| Turn‑on switching energy (EON) | 0.08 mJ |
The device is rated for a maximum collector‑emitter voltage of 1200 V.
It is rated for a continuous collector current of 1 A.
The datasheet specifies a power dissipation of 28 W at 25 °C.
The turn‑on delay time is 13 ns at a junction temperature of 25 °C.